Fig. 1
A schematic diagram of the fabrication process. (a) ITO/glass substrate. (b) Deposition of the Al electrode by sputtering. (c) Pt covering the Al electrode. (d) Formation of the AlOx interface layer by annealing at 400 °C in a vacuum. (e) SEM image of the annealed Pt/Al/ITO device. The thicknesses of the Pt, Al and ITO are approximately 66 nm, 256 nm and 161 nm, respectively