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Fig. 7 | Nanoscale Research Letters

Fig. 7

From: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Fig. 7

a Transmission electron microscopy (TEM) image of TiN/Ti/HfO x/TiN RRAM device. b Typical current-voltage (I-V) characteristics of the device with 30-nm cell size. c 106 endurance switching cycles obtained from 500 μs pulse. d A retention lifetime of 10 years is expected by testing at 150∘C ; reprinted from refs. [81, 103]

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