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Table 3 Comparison between metal-oxide RRAM and conductive bridge RRAM

From: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Parameter	Metal-oxide RRAM	Conductive bridge RRAM
Speed (ns)	5 [81]	1 [99]
Operation voltage (V)	∼ 3 [51]	∼ 7 [86]
Operation current (μA)	5 [51]	10 [87]
Endurance (cycles)	10¹² [84]	10⁶ [41]
On/off ratio	10⁷ [88]	10⁷ [100]
Retention@ 85^∘C (s)	10⁶ [44]	10⁶ [41]
Multilevel capacity	Yes	Yes
CMOS compatible	Yes	Yes
Fabrication	Easy	Easy
Scalability	Good	Good

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