Skip to main content

Table 3 Comparison between metal-oxide RRAM and conductive bridge RRAM

From: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

ParameterMetal-oxide RRAMConductive bridge RRAM
Speed (ns)5 [81]1 [99]
Operation voltage (V) 3 [51] 7 [86]
Operation current (μA)5 [51]10 [87]
Endurance (cycles)1012 [84]106 [41]
On/off ratio107 [88]107 [100]
Retention@ 85C (s)106 [44]106 [41]
Multilevel capacityYesYes
CMOS compatibleYesYes
FabricationEasyEasy
ScalabilityGoodGood