Account

Table 3 The rise time and decay time of UV photodetectors without post annealing and after the annealing at different temperatures

From: Effects of Post Annealing on Electrical Performance of Polycrystalline Ga₂O₃ Photodetector on Sapphire

Temperature (°C)	τ_r1 (s)	τ_r2 (s)	τ_d1 (s)	τ_d2 (s)
As-deposited	0.215	1.283	0.133	1.072
800	0.183	0.936	0.083	0.733
900	0.207	0.783	0.078	0.735
1000	0.148	0.672	0.067	0.634

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