Fig. 3From: Infrared photovoltaic detector based on p-GeTe/n-Si heterojunctiona Schematic diagrams illustrating the fabrication process of photovoltaic detector based on p-GeTe/n-Si heterojunction and b the device structure. c–d Temporal photoresponse of the device. e Plots of log(J)-V characteristics of the photovoltaic detector under dark (black line) and different irradiation densities (colored lines). f Plots of R (responsivity)-V and gD* (detectivity)-V characteristics of the photovoltaic detectorBack to article page