Table 1 Optoelectronic characteristics of WSe2 homojunction formed by different methods
From: Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection
WSe2 homojunction formed by | Wavelength (nm) | Responsivity (A W−1) | Detectivity (jones) | Time | References |
|---|---|---|---|---|---|
h-BN/two gates | 532 | 7 × 10−4 | - | 10 ms | 24 |
SiN/two gates | 500–900 | 0.016 | - | - | 25 |
Polyethylene imine chemical doping | 520 | 0.08 | 1011 | 200 μs | 26 |
Cetyltrimethyl ammonium bromide chemical doping | 450 | 30 | 1011 | 7.8 ms | 27 |
HfO2/two gates | 532 | 0.21 | - | - | 28 |
h-BN/interface gate | 637 | 1.07 | 1012 | 106 μs | This work |