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Table 1 Optoelectronic characteristics of WSe2 homojunction formed by different methods

From: Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection

WSe2 homojunction formed by Wavelength (nm) Responsivity (A W−1) Detectivity (jones) Time References
h-BN/two gates 532 7 × 10−4 - 10 ms 24
SiN/two gates 500–900 0.016 - - 25
Polyethylene imine chemical doping 520 0.08 1011 200 μs 26
Cetyltrimethyl ammonium bromide chemical doping 450 30 1011 7.8 ms 27
HfO2/two gates 532 0.21 - - 28
h-BN/interface gate 637 1.07 1012 106 μs This work