Fig. 6
From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

Measured IDS-VGS curves of the 2.5, 4, and 9 nm-thick ZrO2 FeFETs for the initial and two polarization states with 1 μs P/E pulses
From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
Measured IDS-VGS curves of the 2.5, 4, and 9 nm-thick ZrO2 FeFETs for the initial and two polarization states with 1 μs P/E pulses