Fig. 8From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipolesa The evolution of IDS-VGS curves for the two polarization states of the 4 nm ZrO2 FeFETs with different RTA temperatures. b The 4 nm ZrO2 device annealed at 500 °C has a much better retention performance compared to the transistors with RTA at the lower temperaturesBack to article page