Fig. 3
From: Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks
a Optical microscopic image of BLG/SL-MoSe2 on a hole. b The temperature-dependent MR loops of Co/BLG/SL-MoSe2/NiFe junction at fixed current (I = 10 μΑ). (Top-inset) The temperature-dependent junction resistance of Co/BLG/SL-MoSe2/NiFe. (Bottom-inset) The linear I-V curve of Co/BLG/SL-MoSe2/NiFe device at T = 4 K. c Schematic drawing of spin-dependent density of states for BLG and SL-MoSe2 heterostacks. After annealing the devices, the Fermi levels of BLG adjacent to the Co or NiFe are shifted due to n-type or p-type doping. d Before and after annealing, the MR magnitudes as a function of temperature for the structure of Co/BLG/SL-MoSe2/NiFe. (Inset) After annealing, the temperature-dependent MR loop of the Co/BLG/SL-MoSe2/NiFe junction at a fixed current, I = 10 μΑ