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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

Fig. 3

(a) Numerically calculated hole concentration profiles, and (b) normalized hole concentration profiles in the first quantum well near the p-EBL for μLEDs A, B and C, respectively. Inset figure shows the position along which the hole concentration profiles are captured. Data are calculated at the current density of 40 A/cm2

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