Fig. 1From: Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunctiona Cross section of the proposed double-heterojunction AlGaN/GaN SBD and main fabrication process. LAC is the length of anode to cathode. LFP and L1 are 1 μm and 2 μm, respectively. b HR-TEM image of the anode after ICP and metal depositionBack to article page