Fig. 5From: Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Applicationa Schematic diagram, b Ge/Si and P profile in one layer of P-doped Si0.93Ge0.07/Si0.78Ge0.22/P-doped Si0.93Ge0.07 ML. c Schematic diagram, d Ge/Si and P profile in three layers of P-doped Si0.93Ge0.07/Si0.78Ge0.22/P-doped Si0.93Ge0.07 MLBack to article page