Fig. 6
source contact. b Effective BSO as a function of Vg. The inset shows the surface carrier distribution in the Cr-TI layer under Vg = − 10 V, + 3 V, and + 10 V. a–c Reproduced with permission from Yan et al., Nat. Commun. 7, 1 (2016). Copyright 2016 Nature Publishing Group [89]. d, e Reproduced with permission from Fan et al., Nat. Mater. 13, 699 (2014). Copyright 2014 Nature Publishing Group [95]. f, g Reproduced with permission from Fan et al., Nat. Nanotechnol. 11, 352 (2016). Copyright 2016 Nature Publishing Group [96]
Spin manipulation. a Schematic illustration of a 2D spin field-effect switch based on a vdW heterostructure of graphene/MoS2 with a typical nonlocal magnetoresistance measurement. b The nonlocal resistance Rnl switches between RP and RAP for parallel and antiparallel magnetization orientations of the Co electrodes. The spin signal is calculated as ΔRnl = RP − RAP. c The plot with blue circles shows the gate modulation of the spin signal ΔRnl. The solid black line represents the sheet conductivity of the MoS2 as a function of Vg. The insets show the spin current path in the OFF and ON states of MoS2. d Schematic illustration of SOT-induced magnetization switching in a Cr-doped TI bilayer heterostructure. The inset shows illustrations of the Hall bar device and the measurement setting. e Experimental results of SOT-induced magnetization switching by an in-plane direct current at 1.9 K while applying a constant in-plane external magnetic field By during the measurement. The inset shows an enlarged version of the circled part in the figure. f 3D schematic of the Hall bar structure of the Al2O3/Cr-TI/GaAs stack with a top Au gate electrode. A gate voltage of Vg can be applied between the top gate and the