Table 3 Several properties of the devices with conventional doping and electrical doping approaches at a glance
From: Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey
Article with Ref. no. features | Electrical doping approach | Conventional doping approach | ||||
|---|---|---|---|---|---|---|
Yu et al. [44] | Lee et al. [123] | Tietze et al. [124] | Ling et al. [48] | An et al. [49] | Liu et al. [97] | |
Device | Polyfuran-based photo-voltaic cells | Au-PbS core–shell nanocrystals | OLEDs | Triangular grapheme with B/N doped | Graphene nanoribbon | Copper-modified DNA |
Conductivity | High | 1 S/cm | > 10–2 S/cm | – | – | Enhanced |
Driving voltage | Low open-circuit voltage 0.2–0.4 V | − 40 to + 40 V | − 2.0 < V < 0.3 | − 2.2 to 2.2 | – | − 0.6 to + 0.6 V |
Doping | Dopant concentration ≤ 2% | High doping density | 0.1 mol% | B/N doped | B/N doped | Cu doped |
Procedure | Atomic force microscopy | Intra-particle charge transfer (plasmonic enhancement) | Ground state integer charge transfer | NEGF + DFT | DFT + NEGF | DFT + NEGF |
Constrain | Enhanced work function at high dopant concentration cannot be explained by integer charge transfer | The amount of charge transferred between Au and PbS depends on the core size and shell thickness which still has to be determined | Electrical doping is not sufficient to fill the deep traps | Intra-molecular weak interaction effect on rectifying property | Theoretical approach | Theoretical approach |