Fig. 3
From: Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device
Conduction mechanism analysis of Ag/SiOx:Ag/p++-Si and Ag/SiOx:Ag/TiOx/p++-Si devices. a The linear I–V curve of Ag/SiOx:Ag/p++-Si and b Ag/SiOx:Ag/TiOx/p++-Si device. c The conduction mechanisms correspond to SCLC at HRS and Ohmic at LRS for the Ag/SiOx:Ag/TiOx/p++-Si device according to the fitting results of the positive region of I–V curve in (b). d Cell area dependence of the conductance at the LRS or the HRS