Fig. 7From: Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor DeviceExperimental results of current decay in Ag/SiOx:Ag/TiOx/p++-Si memristor device after the stimulation process. a The normalized current decay versus time showing the transformation from STP to LTP; b The memory retention and relaxation time (τ) as a function of the pulse amplitudeBack to article page