Fig. 3From: Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methodsa Cross-sectional TEM image of the 5 μm diameter GeSn circular mesa without top polysilicon layer. Inset: SIMS depth profile of the GeSn layer. b High-resolution TEM image of the GeSn/Ge interface (region A). c High-resolution TEM image for the middle region of the GeSn layer (region B). Inset: FFT pattern of region BBack to article page