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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

Fig. 5

a The diameter of the Ge pedestal as a function of selective wet etching time for 3 μm (green dashed line) and 5 μm (blue dashed line) diameters Ge0.902Sn0.098 disks. b Raman shift line scan measurements performed along the diameter of 5 μm Ge0.902Sn0.098 mesa (green dot) and microdisks with 2 μm diameter Ge pedestal (purple dot) and 300 nm diameter Ge pedestal (blue dot)

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