Fig. 3From: High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric FieldCross-sectional SEM images of Si nanostructures obtained from a MacE without bias, b MaCE with + 20 V, c MaCE with + 30 V, and d MaCE with + 40 V. e Schematic illustrations of nanostructure formation under various bias conditionsBack to article page