Fig. 4From: Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETsDependence of Tmax of Ga2O3 MOSFETs with SiC substrate on a the length of device L, b the thickness of Ga2O3 layer tch, and c ambient temperature Tamb at different power P. Symbols and lines denote the results of proposed model and simulation, respectivelyBack to article page