Table 1 Key parameters of structure
From: Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Symbol | Quantity | Default value |
|---|---|---|
Lg | Gate length | 2 μm |
L | Device length | 150 μm |
tch | Channel thickness | 300 nm |
tsub | Substrate thickness | 500 μm |
From: Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Symbol | Quantity | Default value |
|---|---|---|
Lg | Gate length | 2 μm |
L | Device length | 150 μm |
tch | Channel thickness | 300 nm |
tsub | Substrate thickness | 500 μm |