Fig. 4From: Synthesis of Vertically Aligned ZnO Nanorods Using Sol-gel Seeding and Colloidal Lithography Patterninga SEM image of a CL-patterned resist layer using 140-nm-diameter PS-NBs on a ZnO NP-seeded Si substrate, after RIE etching and Al wet etching. b Distribution of the diameter of the etched nanoholes in the resist layer. c The radial distribution function of the patterned nanoholes, with an average nanohole neighboring separation of 392 nmBack to article page