Fig. 1From: Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of GalliumGrowth studies of InP nanowires. a Schematic illustration of the experimental setup for both InP and GaP nanowires growth. SEM images of InP nanowires grown at b 400 °C, c 450 °C, d 480 °C, e 520 °C and f 550 °C. g Diameter distribution of nanowires prepared at different temperatures. h Raman and i PL comparison of nanowires grown at different temperaturesBack to article page