Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells

Table 2 Root-mean-square roughness (unit: nm) of 10 nm/20 nm post-annealed MoO_X films on SiO₂ wafers and refractive index n at 633 nm of the 20-nm films

Annealing temperature (°C)	None	100	200	300
RMS-10 nm	4.116	8.806	12.124	12.913
RMS-20 nm	1.399	0.940	0.845	0.709
n at 633 nm	1.998	1.997	1.989	1.984