Fig. 4
Wafer-scale MOCVD growth of continues MoS2 and WS2 film. a The graphical schematic of CVD device and the related precursors for MOCVD of 2D MoS2 and WS2 films. c The batch of 8100 FET devices based on 2D MoS2 film over Si/SiO2 wafer. The inset shows the enlarged image of one mm square containing 100 devices. d The sequential fabrication stage of stacked MoS2-based device. e The image demonstrates the MoS2 FET devices on first and second layers. f The IDS-VDS of two neighboring FET devices on two different layers. Reprinted with permission from [88]