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Fig. 8 | Nanoscale Research Letters

Fig. 8

From: 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

Fig. 8

a Graphical scheme of deposition of 2D MoO3 nanofilms by PE-ALD. b The injection of precursor into ALD chamber and c the reaction between precursor and Au surface (d) and the complete deposition of a monolayer film over Au substrate. e The thickness of PE-ALD MoO3 film over Au substrate vs. the ALD cycle number at based on the usage of (NtBu)2(NMe2)2Mo precursor and O2 plasma at 150 °C and 250 °C, with the precursor dosing time of 2 s and plasma exposure time of 5 s. f The saturation curve of (NtBu)2(NMe2)2Mo precursor. The GPC is demonstrated as the function of precursor dosing time. g The saturation curve for O2 plasma showing the GPC as the function of plasma exposure time. Reproduced with permission from [141]

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