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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Fig. 4

a \(I_{{{\text{ds}}}}{-}V_{{{\text{gs}}}}\) characteristics of B-TFET and b variation in SS and the \(I_{{{\text{on}}}}{-}I_{{{\text{off}}}}\) ratio with different \(L_{i}\); 2-dimensional reversely biased potential distribution of the proposed B-TFET for Li equal to c 20 nm and d 100 nm

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