Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

Table 1 Molecular dynamics simulation model parameters

Workpiece material	GaAs single crystal
Tool edge radius	10 nm
Workpiece size	85 nm × 30 nm × 35 nm
Lattice constant	5.65 Å
Initial temperature	293 K
Cutting depth	4 nm
Cutting speed	Cutting crystal orientation
200 m/s	\((010)\,[\overline{1}00]\)
400 m/s
800 m/s
400 m/s	\((010)\,[\overline{1}00]\)
	\((\overline{1}10)\,[\overline{1}\overline{1}0]\)
	\((\overline{2}11)\,[\overline{1}\overline{1}\overline{1}]\)