Fig. 3From: Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobilitya Measured C as a function of voltage V characteristics for Ge pMOS capacitors on wafers A, B, and C. b J versus V curves for the devices. c Benchmarking of J (extracted at VFB ± 1 V) of the Ge MOS capacitors in this work against data obtained for similar bias conditions from the literatureBack to article page