Fig. 5
From: Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
a Rtot versus LG curves for Ge nMOSFETs on wafers A, B, and C. The fitted line intersecting at the y-axis and the slope of linear fit lines are utilized to extract the RSD and RCH, respectively. b μeff for the Ge nMOSFETs in this work versus previously published results for unstrained Ge transistors. The devices on wafer A show the improved μeff than the Si universal mobility in the entire range of Qinv