Fig. 4
From: Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

Variation of an individual aluminum percentage to donor surface trap from deep to shallow with respect to the conduction band
From: Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs
Variation of an individual aluminum percentage to donor surface trap from deep to shallow with respect to the conduction band