Fig. 2From: The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical PropertiesThe cross section TEM images of samples A, B and C. In the image of sample A, the red dashed line marks the undulated MQWs interface and the red arrows point out the indium-rich clusters in MQWs. In the image of sample C, the green arrow points out the damaged part interfaces of MQWsBack to article page