Fig. 4From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafera Breakdown curves under Na = 2.0 × 1017 cm−3 and various Lchannel. b Schematic of GaN TG-MOSFET. c–f Depletion region at different reverse bias under Na = 2.0 × 1017 cm−3 and Lchannel = 0.4 μm, including VDS = 200 V, 400 V, 800 V and 1000 V. g Electric Field distributed along line A at VDS = 1000 VBack to article page