Fig. 6From: 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafera, b were the distributions of Total Current Density and Impact Gen Rate under Na = 2.0 × 1017 cm−3 and Lchannel = 0.4 μm, respectively. c, d were the distributions of Total Current Density and Impact Gen Rate under Na = 2.0 × 1017 cm−3 and Lchannel = 1.2 μm, respectivelyBack to article page