Fig. 1From: Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Filma Schematic of the NVFET with amorphous HfO2 gate insulator. b HRTEM image shows the 3-nm-thick amorphous HfO2. c Measured P–V curves for TaN/HfO2/Ge capacitor. d Pr and Vc vs. the number of sweeping cycles for amorphous HfO2 capacitors. e PUND test of HfO2 capacitor exhibiting the switching current component by isolating the non-switching chargeBack to article page