Fig. 5
From: Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
a VG pulse waveform with the different T. b The ID increase as a function of the gate stimulus number plots with the different T. c Extracted (I2 − I1)/I1 and (I10 − I1)/I1, representing PPF and PTP behaviors, respectively, of the transistor