Fig. 11

The comparison of I_on for a N-/, b P-type GAA/NC-GAA FinFETs. Because the metal sidewall can reduce the S/D resistance, I_on is increased as the fin height increases. The distributions of the current density of c N-/, d P-type GAA and NC-GAA FinFETs with the fin heights of 55 and 85 nm, respectively. e The comparison of capacitance difference (|C_g,high| −|C_g,low|) between N-type GAA/NC-GAA FinFETs under different HWKF numbers. f The surface potential (|φ_s,D| −|φ_s,S|) comparison of two devices under the different HWKF numbers. g The charge density distribution of two devices under the same HWKF number