Fig. 3From: Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layera The schematic plot of the device with the fin height of 70 nm which has the WK random distribution. b The illustrations of random generation devices with the different MGNs. Notably, the white grain color is represented as HWKF; the green grain color is denoted as LWKF. The Gaussian distributions with HWKF for c GAA and d NC-GAA FinFETs under the fixed MGNsBack to article page