Fig. 3From: Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memorya Program operation conditions at a VC of 0 V when a VGC,ST is 0.0 V (left) and − 0.4 V (right). b NP as a function of TST,1 at different VGC,ST of 0.0 V (black line) and − 0.4 V (red line). c Energy band diagrams at 10 ms of TST,1 when VGC,ST is 0.0 V (left) and − 0.4 V (right)Back to article page