Fig. 4From: Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memorya IA − VAC characteristics of the 3-T TRAM by the VAC pulse with Trise, Tfall = 1000 s, Thold = 2 ns when the VGC is fixed at − 0.4 V. b NP as a function of TST,1 at different VAC,ST of 0.5 V (black line) and 0.6 V (red line). c Energy band diagrams at TST,1 = 10 s with different VAC,ST of 0.5 V and 0.6 VBack to article page