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Table 1 Operating voltage condition of 3-T TRAM array

From: Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory

Operation mode VA, (V) Word line (WL), VG (V) Bit line (BL), VC (V)
Selected Un-sel Selected Un-sel
Standby 0.6 − 0.4   0.0  
Program − 0.4 − 1.2 − 0.8 0.0
Erase 0.8 − 0.4 0.4 1.2
Read − 0.8   − 0.8 0.0