Fig. 5

a Collective comparison of the FATFET and ATFETs at different drain bias points (\(V_{{\rm D}} = 0.01\) and 0.5 V). A voltage gain of \(\approx\) 0.2 V as \(V_{{\rm int}}\) is achieved in FATFET than the ATFET that amplifies \(I_{{\rm on}}\). b Hysteresis observation in FATFET through scaled \(t_{{\rm fe}}\) during forward (solid) and reverse gate-bias sweep (dotted). Higher the \(t_{{\rm fe}}\) larger will be the hysteresis