Fig. 6From: Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity AnalysesFATFET performance under fixed a \(P_{{\rm r}}=20\) μC/cm2 and b \(E_{{\rm c}}=0.05\) MV/cm. A high impact on gate leakage and tunneling through a high \(E_{{\rm c}}\), resulting in high \(I_{{\rm off}}\) and \(I_{{\rm on}}\). c The significance and appropriate choice of \(P_{{\rm r}}\) and \(E_{{\rm c}}\) estimation from the perspective of \(\hbox{SS}_{{\rm avg}}\). Similar to plot (a), \(\hbox{SS}_{{\rm avg}}\) deteriorates at high \(E_{{\rm c}}\), whereas \(P_{{\rm r}}\) is insignificantBack to article page