Fig. 1From: Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic Systema Cross-sectional HRTEM of the Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device. Right side magnified switching layer presented. b EDS line profile of the RRAM device measured from Au/Ti top electrode to ITO bottom electrodeBack to article page