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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

Fig. 2

a Schematic diagram of Pt/HfO2/Al2O3/TaN memristive device in electrical measurement configuration, which shows that the external voltage is applied to the Pt top electrode with the TaN bottom electrode electrically grounded. b I–V curves of an electroforming process (blue) and reset process (red). The arrows and numbers represent voltage sweep directions and sequences, respectively. c Typical bipolar I–V characteristics of 100 consecutive cycles, where green arrows indicate the set and reset directions. d DC endurance test results over 1000 cycles; the values of ON-state and OFF-state resistances were read at ± 0.2 V under ambient conditions. e Data retention characteristics of ON state and OFF state under a constant voltage stress of 0.2 V for 104 s at room temperature. f Statistical distribution analyses of set and reset voltages for the 100 switching cycles

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