Fig. 7From: Sputter-Deposited Binder-Free Nanopyramidal Cr/γ-Mo2N TFEs for High-Performance Supercapacitorsa Areal capacities for the Cr-doped Mo2N tested under various scan rates, b plot of diffusion and capacitive contribution of Cr/Mo2N-4 electrode evaluated, at a scan rate of 80 mV/s, and c illustrating the diffusive and capacitive contributions of different doping concentration of Cr-doped Mo2N electrodes, at a fixed scan rate of 80 mV/sBack to article page