Fig. 8From: Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conductiona Test circuit for turn-on/off process. P-i-N diode acts as FWD in the Con. MOS. Fin diode acts as FWD in the FDMOS. Simulation of the b turn-on and c turn-off transient for the FDMOS and the Con. MOSBack to article page